光纤通信有源器件的发展现状

王启明; 赵玲娟; 朱洪亮; 韩勤; 成步文

doi:10.11959/j.issn.1000-0801.2016141

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光纤通信有源器件的发展现状

专题：光纤发明50周年 | 更新时间：2024-06-05

- 光纤通信有源器件的发展现状
- Progress in active devices for optical fiber communication
- 电信科学 2016年32卷第5期页码：10-23
- 作者机构：
  
  1. 中国科学院半导体研究所集成光电子学国家重点联合实验室，北京 100045
  2. 中国科学院半导体研究所中国科学院半导体材料科学重点实验室，北京 100045
- 作者简介：
  
  [ "王启明（1934-），男，中国科学院半导体研究所研究员、院士，主要研究方向为半导体光电子学。" ]
  [ "赵玲娟（1964-），女，中国科学院半导体研究所研究员、博士生导师，主要从事InP基半导体激光器及光子集成芯片技术的研究工作，包括高速DFB 激光器、电吸收调制器、半导体光放大器、半导体可调谐激光器、全光时钟恢复等光子信息处理器件、光生微波集成芯片以及宽带混沌光集成芯片的研究工作。" ]
  [ "朱洪亮（1957-），男，中国科学院半导体研究所研究员、博士生导师，主要从事InP基光子集成芯片技术的研究工作，包括高速DFB激光器、电吸收调制DFB 激光器、激光器阵列集成发射芯片等研究工作。" ]
  [ "韩勤（1965-），男，博士，中国科学院半导体研究所研究员、博士生导师，主要研究方向为光电子材料、器件和多功能光电集成芯片，包括高速Ⅲ/Ⅴ族半导体光探测器、高饱和电流模拟光探测器、线性/盖格模式 APD 及焦平面 APD 阵列、高性能Ⅲ/Ⅴ族半导体光放大器和激光器；用于光纤通信、接入网和光互连的 InP 基及 Si 基多功能光电集成芯片。" ]
  [ "成步文（1967-），男，中国科学院半导体研究所研究员、博士生导师，主要研究方向为硅基异质结构材料生长和器件研制，包括硅衬底上SiGe、Ge、GeSn等Ⅳ族材料的外延生长，并利用这些材料开展硅基高效发光器件、高速高灵敏度光电探测器、低功耗电光调制器、新型高迁移率MOSFET等光电子和微电子器件和芯片的研制。" ]
- 基金信息：
- DOI：10.11959/j.issn.1000-0801.2016141
  中图分类号： TN36
- 网络出版日期：2016-05，
  
  纸质出版日期：2016-05-20
- 稿件说明：
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王启明, 赵玲娟, 朱洪亮, 等. 光纤通信有源器件的发展现状[J]. 电信科学, 2016,32(5):10-23.

Qiming WANG, Lingjuan ZHAO, Hongliang ZHU, et al. Progress in active devices for optical fiber communication[J]. Observation and communication, 2016, 32(5): 10-23.
王启明, 赵玲娟, 朱洪亮, 等. 光纤通信有源器件的发展现状[J]. 电信科学, 2016,32(5):10-23. DOI： 10.11959/j.issn.1000-0801.2016141.

Qiming WANG, Lingjuan ZHAO, Hongliang ZHU, et al. Progress in active devices for optical fiber communication[J]. Observation and communication, 2016, 32(5): 10-23. DOI： 10.11959/j.issn.1000-0801.2016141.

摘要

光纤通信技术的飞速发展使其成为当今信息社会的重要支柱。其发展的基石是有源和无源半导体光电子器件。综述了几种主要的有源光电子器件的研究现状及其发展趋势，包括高速调制DFB激光器及其集成芯片、EDFA泵浦源用980 nm半导体高功率激光器、化合物半导体光电探测器、硅基长波长光电探测器等。

Abstract

The rapid progress of optical fiber communication makes it become the key technology for the information society.The active and passive optoelectronic devices are the foundation of the optical communication.The progress and development trend of the key active optoelectronic devices were reviewed

including DFB laser

photonic integrated circuit

980 nm high power laser for EDFA pumping

compound semiconductor photodetector and Si-based long wavelength photodetector.

关键词

Keywords

references

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